High Speed InGaAs Pin Photodiode
13PD75-TO (GCA)
The planar 13PD75-TO series of InGaAs photodiodes is intended for high speed, low noise,
and high linearity applications. The diameter of the photosensitive region is sufficiently small to
enable very low dark current and low capacitance operation while offering efficient coupling to
multi-mode fibers. Devices are hermetically sealed in standard TO-46 headers with either ultra
flat or lensed window caps. High reliability is achieved through planar, dielectric-passivated
design, and 100% purge burn-in ( 200
o
C, 15 hours, V
r
= 20V ). Chips can also be attached
and wire bonded to customer-supplied or other specified packages.
Features
Planar Structure
Dielectric Passivation
100% Purge Burn-In
High Responsivity
Device Characteristics:
Parameters
Test Conditions
-
-5V
-5V
1300nm
-
(-3dB)
-
-
Min
-
0.2
-
0.90
-
-
Typ
-
Max
-20
nA
pF
-
0.5
-
Units
Volts
Operating Voltage
Dark Current
Capacitance
Responsivity
Rise/Fall
Frequency Response
Reverse Voltage
Forward Current
Reverse Current
Operating Temperature
Storage Temperature
Soldering Temperature
2
0.90
0.95
-
1.5
A/W
ns
GHz
Absolute Maximum Ratings
30 Volts
5 mA
5 mA
o
-40 C to + 85
o
C
-40
o
C to + 85
o
C
250
o
C
829 Flynn Road, Camarillo, CA 93012
tel(805)445-4500
fax(805)445-4502
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