High Performance InGaAs p-i-n Photodiode
鈥楽T鈥?Active Device Mount
13PD150-ST
The 13PD150-ST, an InGaAs photodiode with a 150碌m-diameter photosensitive region
packaged in a TO-46 header and aligned in an AT&T ST active device mount, is intended for
high coupling efficiency to multi-mode fiber in moderate-to-high speed applications. Planar
semiconductor design and dielectric passivation provide low noise performance. Reliability is
assured by hermetic sealing and a 100% purge burn-in ( 200
o
C, 15 hours, V
r
= 20V ). The ST
receptacle is suitable for bulkhead and PC board mounting.
Features
Planar Structure
Dielectric Passivation
100% Purge Burn-In
High Responsivity
Device Characteristics:
Parameters
Operating Voltage
Dark Current
Capacitance
Responsivity
Rise/Fall
Reverse Voltage
Forward Current
Reverse Current
Operating Temperature
Storage Temperature
Soldering Temperature
Test Conditions
-
-5V
-5V
1300nm
-
-
-
Min
-
0.5
1.5
0.7
-
Typ
-
Max
-20
nA
pF
-
0.5
Units
Volts
2.5
2.25
0.8
-
A/W
ns
Absolute Maximum Ratings
20 Volts
5 mA
1 mA
o
-40 C to + 85
o
C
-40
o
C to + 85
o
C
250
o
C
829 Flynn Road, Camarillo, CA 93012
tel(805)445-4500
fax(805)445-4502
ANADIGICS
1
