GaAs/GaAs SIDE LOOK PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-134G2 is a GaAs infrared emitting diode
molded in clear, lensed side looking package.
The MIE-134G2 provides a broad range of
intensity selection .
1.70 鹵 0.10
(.067鹵.004)
0.30max
(.012)
0.50max
(.020)
MIE-134G2
Unit: mm( inches )
Package Dimensions
4.00鹵0.10
(.158鹵.004)
0.80鹵0.10
(.032鹵.004)
2.05
(.081)
2.00鹵0.10
(.078鹵.004)
2.45鹵0.10
(.080鹵.004)
2.00max
(.078)
0.25max
(.010)
1
2
3
1
2
3
4.00 鹵 0.10
(.158鹵.004)
R1.1
2.00鹵0.10
(.078鹵.004)
3.09鹵0.10
(.154鹵.004)
3.00*0.5
(.118)
5.10鹵0.10
(.200鹵.004)
2.50鹵0.30
(.099鹵.012)
l
Selected to specific on-line intensity and
radiant intensity ranges
l
Low cost, plastic side looking package
Mechanically and spectrally matched to
The MID-13A45 of phototransistor .
1.25
(.049)
1.25
(.049)
l
9.60
(.378)
7.60
(.299)
Features
Pin #
1
2
3
Name
Cathode
Anode
Open
NOTES :
1. All dimensions are in millimeters.
2. Tolerance is 鹵 0.25mm unless otherwise noted .
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Power Dissipation
Peak Forward Current(300pps,10碌s pulse)
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
75
1
50
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
o
260 C for 5 seconds
Unit
mW
A
mA
V
Unity Opto Technology Co., Ltd.
0.25max
(.010)
3.70鹵0.10
(.146鹵.004)
11/17/2000
1
2
