1214-30
30 Watts, 28 Volts, Pulsed
Radar 1200 - 1400 MHz
GENERAL DESCRIPTION
The 1214-30 is an internally matched, COMMON BASE transistor capable of
providing 30 Watts of pulsed RF output power at two milliseconds pulse
width, twenty percent duty factor across the band 1200 to 1400 MHz. This
hermetically solder-sealed transistor is specifically designed for long pulse
radar applications. It utilizes gold metalization and diffused emitter ballasting
to provide high reliability and supreme ruggedness.
CASE OUTLINE
55AW, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
88 Watts
50 Volts
3.5 Volts
4.0 Amps
- 65 to + 200
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
CHARACTERISTICS
Power Out
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
TEST
CONDITIONS
F = 1200-1400 MHz
Vcc = 28 Volts
Pulse Width = 2 ms
Duty = 20%
Rated Conditions
MIN
30
6.0
7.0
48
3:1
TYP
MAX
UNITS
Watts
Watts
dB
%
畏
c
VSWR
BVces
BVebo
Hfe
Cob
胃
jc
Collector to Emitter Breakdown
Emitter to Base Breakdown
DC Current Gain
Output Capacitance*
Thermal Resistance
Ic = 50 mA
Ie = 5 mA
Vce=5 V, Ic =500mA
F=1 MHz, Vcb=28V
Rated Pulse Condition
50
3.5
20
2.0
Volts
Volts
pF
C/W
o
* Not measureable due to internal prematch network
IssueA July 1997
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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