1214 - 300
300 Watts - 50 Volts, 100碌s, 10%
Radar 1200 - 1400 MHz
GENERAL DESCRIPTION
The 1214-300 is an internally matched, COMMON BASE transistor capable
of providing 300 Watts of pulsed RF output power at one hundred
microseconds pulse width, ten percent duty factor across the band 1200 to
1400 MHz. This hermetically solder-sealed transistor is specifically designed
for L-Band radar applications. It utilizes gold metalization and diffused
emitter ballasting to provide high reliability and supreme ruggedness.
CASE OUTLINE
55KT, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
1458 Watts
65 Volts
3.5 Volts
17 Amps
- 65 to + 200
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
畏
c
VSWR
1
CHARACTERISTICS
Power Out ( Note 2)
Power Input
Power Gain
Collector Efficiency
Load Mismatch Tolerance
TEST CONDITIONS
F = 1200-1400 MHz
Vcc = 50 Volts
Pulse Width = 100
碌s
Duty = 10 %
F = 1400MHz, Po
=270W
MIN
270
42.7
8.0
45
3:1
TYP
MAX
UNITS
Watts
Watts
dB
%
BVces
BVebo
Hfe
胃
jc
1
Collector to Emitter Breakdown
Emitter to Base Breakdown
DC Current Gain
Thermal Resistance
Ic = 50 mA
Ie = 25 mA
Vce = 5 V, Ic = 5 mA
Rated Pulse Condition
65
3.0
10
Volts
Volts
45
0.25
o
C/W
Note 1: Pulse condition of 100碌sec, 10%.
Note 2: Product Selected to 300 Watt minimum is available, please contact the factory for details.
Issue December, 1994
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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