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SPP11N60S5, SPB11N60S5

SPI11N60S5

Cool MOS鈩?Power Transistor

Feature

鈥?/div>

New revolutionary high voltage technology

鈥?/div>

Ultra low gate charge

鈥?/div>

Periodic avalanche rated

鈥?/div>

Extreme dv/dt rated

鈥?/div>

Ultra low effective capacitances

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Improved transconductance

P-TO220-3-1

V

DS

R

DS(on)

I

D

P-TO262

P-TO263-3-2

600

0.38

11

V

鈩?/div>

A

P-TO220-3-1

2

1

23

Type

Package

Ordering Code

SPP11N60S5

SPB11N60S5

SPI11N60S5

Maximum Ratings

Parameter

P-TO220-3-1

P-TO263-3-2

P-TO262

Q67040-S4198

Q67040-S4199

Q67040-S4338

Marking

11N60S5

Symbol

I

D

Value

11

7

Unit

A

Continuous drain current

T

C

= 25 擄C

T

C

= 100 擄C

Pulsed drain current,

t

p

limited by

T

jmax

Avalanche energy, single pulse

I

D

= 5.5 A,

V

DD

= 50 V

I

D puls

E

AS

22

340

0.6

11

鹵20

鹵

30

mJ

Avalanche energy, repetitive

t

AR

limited by

T

jmax

1)

E

AR

I

D

= 11 A,

V

DD

= 50 V

Avalanche current, repetitive

t

AR

limited by

T

jmax

I

AR

Gate source voltage

V

GS

Gate source voltage AC (f >1Hz)

Power dissipation,

T

C

= 25擄C

A

V

W

擄C

V

GS

P

tot

T

j ,

T

stg

125

-55... +150

Operating and storage temperature

Rev. 2.1

Page 1

2004-03-30

型號

版本

描述

廠商

下載
11N60S5

英文版

Cool MOS⑩ Power Transistor

11N60S5
11N60S5

英文版

Cool MOS⑩ Power Transistor

INFINEON [...

11N60S5

11N60S5 Datasheet

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11N60S5 Datasheet

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