1150MP
150 Watts, 50 Volts, Class C
Avionics 1025 - 1150 MHz
GENERAL DESCRIPTION
The 1150MP is a COMMON BASE bipolar transistor. It is designed for pulsed
systems in the frequency band 1025-1150 MHz. The device has gold thin-film
metallization for proven highest MTTF. The transistor includes input prematch for
broadband capability. Low thermal resistance package reduces junction
temperature, extends life.
CASE OUTLINE
55FW-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
2
Maximum Voltage and Current
BVces Collector to Emitter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
ELECTRICAL CHARACTERISTICS @ 25擄C
SYMBOL
P
OUT
P
IN
P
G
畏c
VSWR
CHARACTERISTICS
Power Out
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
TEST CONDITIONS
F= 1025-1150 MHz
Vcc = 50 Volts
PW = 10
碌sec,
DF = 1%
F = 1090 MHz
MIN
140
7.0
35
TYP
150
30
7.5
38
10:1
MAX
UNITS
W
W
dB
%
250 Watts Peak
60 Volts
4.0 Volts
6.0 Amps Peak
- 65 to +150
o
C
+ 200
o
C
FUNCTIONAL CHARACTERISTICS @ 25擄C
BVebo
Emitter to Base Breakdown
Ie = 1 mA
BVces
Collector to Emitter Breakdown Ic = 10mA
Hfe
DC Current Gain
Vce = 5V, Ic = 500 mA
Cob
Output Capacitance
Vcb = 50 V, f = 1 MHz
2
Thermal Resistance
Tc=25潞C
胃jc
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Initial Issue June, 1994
3.5
65
15
V
V
120
16
0.6
pF
C/W
o
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at
www.advancedpower.com
or contact our factory direct.
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