1090 MP
90 Watts, 50 Volts, Pulsed
Avionics 1025 - 1150 MHz
GENERAL DESCRIPTION
The 1090MP is a COMMON BASE bipolar transistor. It is designed for
pulsed systems in the frequency band 1025-1150 MHz. The transistor
includes input prematch for broadband capability. The device has gold thin-
film metallization for proven highest MTTF. Low thermal resistance package
reduces junction temperature, extends life.
CASE OUTLINE
55FU, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
2
Maximum Voltage and Current
BVces Collector to Emitter Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
250 Watts Peak
60 Volts
4.0 Volts
6.0 Amps Peak
- 65 to +150
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
畏
c
VSWR
CHARACTERISTICS
Broadband Power Out
Power Input
Broadband Power Gain
Collector Efficiency
Load Mismatch Tolerance
TEST
CONDITIONS
F = 1025-1150 MHz
Vcc = 50 Volts
PW = 10
碌sec
DF =1%
F = 1090 MHz
MIN
90
8.0
35
TYP
98
14
8.5
38
10:1
MAX
UNITS
Watts
Watts
dB
%
BVebo
BVces
Cob
h
FE
胃jc
1
Emitter to Base Breakdown
Collector to Emitter Breakdown
Capacitance Collector to Base
DC - Current Gain
Thermal Resistance
Ie = 1 mA
Ie = 10 mA
Vcb = 50 V
Ic= 500mA,Vcc= 5V
Tc=25
C
3.5
65
15
16
120
0.6
Volts
Volts
pF
o
C/W
Note1: At Rated Power Output and pulse conditions
.
2: Maximum Ratings are for RF Amplifier Operation
Issue Aug 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120