10500
500 Watts, 50 Volts, Pulsed
Avionics 1030 / 1090 MHz
GENERAL DESCRIPTION
The 10500 is a high power COMMON BASE BiPolar transistor. It is
designed for pulsed systems in the frequency band 1025 - 1150 MHz, with the
pulse width and duty required for MODE-S, TACAN & TCAS applications.
The device has gold thin-film metallization and diffused ballasting for proven
highest MTTF. The transistor includes input and output prematch for
broadband capability. Low thermal resistance package reduces junction
temperature, extends life.
CASE OUTLINE
55ST Style 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
2
Maximum Voltage and Current
BVces Collector to Base Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
1700 Watts
65 Volts
3.5 Volts
40 Amps
- 65 to + 200
o
C
+ 230
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
畏
c
Pd
VSWR
BVebo*
BVces
h
FE
*
CHARACTERISTICS
Power Out
Power Input
Power Gain
Collector Efficiency
Pulse Droop
Load Mismatch Tolerance
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC - Current Gain
Thermal Resistance
TEST CONDITIONS
F = 1090 MHz
Vcc = 50 Volts
PW = 32
碌sec
DF = 2%
F = 1090 MHz
MIN
500
70
8.5
50
0.5
4:1
Ie = 50 mA
Ic = 100 mA
Ic = 5 A, Vce = 5 V
3.5
65
20
0.12
Volts
Volts
o
TYP
MAX
UNITS
Watts
Watts
dB
%
dB
胃
jc
1
C/W
Note 1: At rated output power and pulse conditions
*: Not measurable due to internal EB returns
Issue C, November 3, 1997
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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