1015 MP
15 Watt, 50 Volts, Class C
Avionics 1025 - 1150 MHz
GENERAL DESCRIPTION
The 1015 MP is a COMMON BASE bipolar transistor. It is designed for
pulsed systems in the frequency band 1025-1150 MHz. The device has gold
thin-film metallization for proven highest MTTF. The transistor includes
input prematch for broadband capability. Low thermal resistance package
reduces junction temperature, extends life.
CASE OUTLINE
55FU, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
2
Maximum Voltage and Current
BVces
Collector to Emitter Voltage
BVebo
Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
50 Watts Pk
65 Volts
3.5 Volts
1.0 Amps Pk
- 65 to + 150
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
畏
c
VSWR
CHARACTERISTICS
Power Out
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
TEST CONDITIONS
F= 1025-1150 MHz
Vcc = 50 Volts
PW = 10
碌sec
DF = 1%
F = 1090 MHz
MIN
15
1.5
10
11
40
20:1
TYP
MAX
UNITS
Watts
Watts
dB
%
BVebo
BVces
Hfe
Cob
胃
jc
2
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC Current Gain to Emitter
Output Capacitance
Thermal Resistance
Ie = 5 mA
Ic = 15mA
Vce = 5V, Ic = 100 mA
Vcb = 50 V, f = 1 MHz
Pulsed
3.5
65
20
5.0
7.5
3.5
Volts
Volts
pF
C/W
o
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
Initial Issue June, 1995
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1
