鈥?/div>
Monolithic Construction with Built鈥搃n Collector鈥揈mitter Diode
MJH6284
PNP
MJH6287
Motorola Preferred Devices
NPN
DARLINGTON
20 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
100 VOLTS
160 WATTS
PD , POWER DISSIPATION (WATTS)
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MAXIMUM RATINGS
Rating
Symbol
VCEO
VCB
VEB
IC
IB
Max
100
100
5.0
20
40
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Peak
Base Current
0.5
Total Device Dissipation @
TC = 25
_
C
Derate above 25
_
C
PD
Watts
W/
_
C
160
1.28
Operating and Storage Junction
Temperature Range
TJ, Tstg
鈥?65 to + 150
CASE 340D鈥?2
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
胃JC
Max
Unit
Thermal Resistance, Junction to Case
0.78
_
C/W
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (擄C)
175
200
Figure 1. Power Derating
Preferred
devices are Motorola recommended choices for future use and best overall value.
漏
Motorola, Inc. 1998
Motorola Bipolar Power Transistor Device Data
1
1
2
3
4
5
6
