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06F7752 Datasheet

  • 06F7752

  • TRANSISTOR MIT DRAIN STROM MESSAUSGANG

  • 6頁

  • ETC

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PD - 9.529B
IRCZ44
HEXFET
廬
Power MOSFET
l
l
l
l
l
l
Dynamic dv/dt Rating
Current Sense
175擄C Operating Temperature
Fast Switching
Ease of Paralleling
Simple Drive Requirements
V
DSS
= 60V
R
DS(on)
= 0.028鈩?/div>
I
D
= 50*A
Description
Third Generation HEXFETs from International Rectifier provide the designer with
the best combination of fast switching, ruggedized device, low on-resistance and
cost-effectiveness.
The HEXSence device provides an accurate fraction of the drain current through
the additional two leads to be used for control or protection of the device. These
devices exhibit similar electrical and thermal characteristics as their IRF-series
equivalent part numbers. The provision of a kelvin source connection effectively
eliminates problems of common source inductance when the HEXSence is
used as a fast, high-current switch in non current-sensing applications.
TO-220 HexSense
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25擄C
I
D
@ T
C
= 100擄C
I
DM
P
D
@T
C
= 25擄C
V
GS
E
AS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
聛
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
聜
Peak Diode Recovery dv/dt
聝
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
50*
37
210
150
1.0
鹵20
30
4.5
-55 to + 175
300 (1.6mm from case)
10 lbf鈥n (1.1 N鈥)
Units
A
W
W/擄C
V
mJ
V/ns
擄C
Thermal Resistance
Parameter
R
胃JC
R
胃CS
R
胃JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
鈥?/div>
Min.
鈥?/div>
鈥?/div>
鈥?/div>
Typ.
鈥?/div>
0.50
鈥?/div>
Max.
1.0
鈥?/div>
62
Units
擄C/W
C-13

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  • 英文版
    TRANSISTOR MIT DRAIN STROM MESSAUSGANG
    ETC
  • 英文版
    TRANSISTOR MIT DRAIN STROM MESSAUSGANG

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