鈥?/div>
FEATURES:
INDIVIDUAL DIODES EQUIVALENT TO 1N4148
Vf MATCH TO 5 mV at 10 mA
ULTRA-HIGH SPEED SWITCHING
QUAD ISOLATED DIODES
C
C
.049"
Absolute Maximum Ratings:
Symbol
Parameter
Limit
100
300
500
-65 to +150
-65 to +200
Unit
Vdc
mAdc
mAdc
擄C
擄C
VBR(R) *1 *2 Reverse Breakdown Voltage
IO
*1
Continuous Forward Current
IFSM
*1 Peak Surge Current (tp= 1/120 s)
Top
Operating Junction Temperature Range
Tstg
Storage Temperature Range
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%
C
C
.023"
A
A
A
A
Electrical Characteristics (Per Diode) @ 25擄C unless otherwise
specified
Symbol Parameter
Conditions
Min
Max
BV1
BV2
Vf1
IR1
IR2
Ct
tfr
trr
VF5
NOTE 1:
Breakdown Voltage
IR = 100uAdc
Breakdown Voltage
IR = 5uAdc
Forward Voltage
IF = 100mAdc *1
Reverse Current
VR = 40 Vdc
Reverse Current
VR = 20 Vdc
Capacitance (pin to pin)
VR = 0 Vdc; f = 1 MHz
Forward Recovery Time
IF = 100mAdc
Reverse Recovery Time
IF = IR = 10mAdc, irr = 1 mAdc, RL = 100 ohms
Forward Voltage Match
IF = 10 mA
Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge
100
75
1
0.1
25
4.0
15
5
5
Unit
Vdc
uAdc
nAdc
pF
ns
ns
mV
Packaging Options:
W: Wafer (100% probed)
(sample probed)
D:
Chip (Waffle Pack)
Metallization Options:
Standard: Al Top
(No Dash #)
U: Wafer
B: Chip (Vial)
Processing Options:
Standard: Capable of JANTXV application
(No Suffix)
Suffix C:
Commercial
ORDERING INFORMATION
PART #: 04M0_ _- _
First Suffix Letter: Packaging Option
Second Suffix Letter: Processing Option
Dash #: Metallization Option
/ Au Backside
Sertech reserves the right to make changes to any product design, specification or other
information at any time without prior notice.
MSC1023.PDF Rev - 11/25/98
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