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應(yīng)該如何理解NAND FLASH一頁的寫入次數(shù)? |
| 作者：mxh0506 欄目：ARM技術(shù) |
在一本書里看到: NAND FLASH devices, on the other hand, have their erase blocks divided further into pages, of 512 bytes typically, which can ONLY be written to a certain NUMBER of times—typically less than 10 times—before their content becomes undefined. Pages can then ONLY be reused once the blocks they are PART of are erased in their entirety. 這個(gè)"小于10次"應(yīng)該怎么理解呢?是指可以隨意寫入0或者1而不必先經(jīng)過擦除嗎?還是只能把未寫成0的1改寫為0? |
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