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VHB2512F Datasheet

  • VHB2512F

  • NPN SILICON RF POWER TRANSISTOR

  • 1頁

  • ASI

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VHB25-12F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI VHB25-12F
is Designed for
Class C, 12.5 V High Band Applications
up to 175 MHz.
PACKAGE STYLE .380 4L FLG
B
.112 x 45擄
A
脴.125 NOM.
FULL R
J
.125
FEATURES:
鈥?/div>
Common Emitter
鈥?/div>
P
G
= 10 dB at 25 W/175 MHz
鈥?/div>
Omnigold鈩?/div>
Metalization System
E
B
C
D
F
E
C
E
MAXIMUM RATINGS
I
C
V
CBO
V
CEO
V
EBO
P
DISS
T
J
T
STG
胃
JC
4.0 A
36 V
18 V
4.0 V
65 W @ T
C
= 25 擄C
-65 擄C to +200 擄C
-65 擄C to +150 擄C
3.5 擄C/W
DIM
A
B
C
D
E
F
G
H
I
J
I
GH
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59
.785 / 19.94
.720 / 18.29
.970 / 24.64
.004 / 0.10
.085 / 2.16
.160 / 4.06
.240 / 6.10
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
ORDER CODE: ASI10714
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CBO
h
FE
C
OB
P
G
畏
C
I
C
= 50 mA
I
C
= 15 mA
I
E
= 5.0 mA
V
CB
= 15 V
V
CE
= 5.0 V
T
C
= 25 擄C
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
18
36
4.0
5.0
UNITS
V
V
V
mA
---
pF
dB
%
I
C
= 250 mA
f = 1.0 MHz
P
OUT
= 25 W
f = 175 MHz
20
---
110
V
CB
= 12.5 V
V
CE
= 12.5 V
10
60
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
鈥?/div>
NORTH HOLLYWOOD, CA 91605
鈥?/div>
(818) 982-1200
鈥?/div>
FAX (818) 765-3004
Specifications are subject to change without notice.
REV. B
1/1

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