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VN2110ND Datasheet

  • VN2110ND

  • N-Channel Enhancement-Mode Vertical DMOS FETs

  • 4頁(yè)

  • SUPERTEX   SUPERTEX

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上傳產(chǎn)品規(guī)格書

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VN2106/VN2110
Thermal Characteristics
Package
I
D
(continuous)
鉁?/div>
0.3A
0.2A
I
D
(pulsed)
1.0A
0.8A
Power Dissipation*
@ T
C
= 25
擄
C
TO-92
TO-236AB
鈥?/div>
胃
jc
胃
ja
I
DR鈥?/div>
0.3A
0.2A
I
DRM
1.0A
0.8A
擄
C/W
125
200
擄
C/W
170
350
1.0W
0.36W (T
A
= 25擄C)
I
D
(continuous) is limited by max rated T
j
.
*
Total for package.
Electrical Characteristics
(@ 25擄C unless otherwise specified)
Symbol
BV
DSS
V
GS(th)
鈭哣
GS(th)
I
GSS
I
DSS
Parameter
Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
VN2110
VN2106
Min
100
60
0.8
-3.8
0.1
2.4
-5.5
100
1
100
I
D(ON)
R
DS(ON)
鈭哛
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25擄C unless otherwise stated. (Pulse test: 300碌s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Typ
Max
Unit
V
V
mV/擄C
nA
碌A(chǔ)
碌A(chǔ)
A
Conditions
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
鹵20V,
V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125擄C
V
GS
= 10V, V
DS
= 25V
V
GS
= 5V, I
D
= 75mA
V
GS
= 10V, I
D
= 500mA
V
GS
= 10V, I
D
= 500mA
V
DS
= 25V, I
D
=0.5A
V
GS
= 0V, V
DS
= 25V, f = 1MHz
ON-State Drain Current
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
0.6
4.5
3.0
0.70
150
400
35
13
4
3
5
6
5
1.2
400
50
25
5
5
8
9
8
1.8
6.0
4.0
1.0
鈩?/div>
鈩?/div>
%/擄C
m
pF
ns
V
ns
Switching Waveforms and Test Circuit
10V
90%
INPUT
0V
PULSE
GENERATOR
R
gen
10%
t
(ON)
t
(OFF)
t
r
t
d(OFF)
t
F
t
d(ON)
V
DD
10%
10%
INPUT
OUTPUT
0V
90%
90%
2
鈩?/div>
V
DD
= 25V
I
D
= 0.6A
R
GEN
= 25鈩?/div>
I
SD
= 0.6A, V
GS
= 0V
I
SD
= 0.6A, V
GS
= 0V
V
DD
R
L
OUTPUT
D.U.T.

VN2110ND相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    ISO HIGH SIDE SMART POWER SOLID STATE RELAY
    STMICROELECTRONICS
  • 英文版
    ISO HIGH SIDE SMART POWER SOLID STATE RELAY
    STMICROELECTRON...
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS FETs
    SUPERTEX
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS FETs
    SUTEX [Sup...
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS FETs
    SUPERTEX
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS FETs
    SUTEX [Sup...
  • 英文版
    HIGH SIDE SMART POWER SOLID STATE RELAY
    STMICROELECTRONICS
  • 英文版
    HIGH SIDE SMART POWER SOLID STATE RELAY
    STMICROELECTRON...
  • 英文版
    ISO HIGH SIDE SMART POWER SOLID STATE RELAY
    STMICROELECTRONICS
  • 英文版
    ISO HIGH SIDE SMART POWER SOLID STATE RELAY
    STMICROELECTRON...
  • 英文版
    Single Peripheral Driver
    ETC
  • 英文版
    Single Peripheral Driver
    ETC
  • 英文版
    Single Peripheral Driver
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS FETs
    SUPERTEX
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS FETs
    SUTEX [Sup...
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS FETs
    SUPERTEX
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS FETs
    SUTEX [Sup...
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS FETs
    SUPERTEX
  • 英文版
    N-Channel Enhancement-Mode Vertical DMOS FETs
    SUTEX [Sup...
  • 英文版
    ISO HIGH SIDE SMART POWER SOLID STATE RELAY
    STMICROELECTRONICS

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