VP2106/VP2110
Typical Performance Curves
BV
DSS
Variation with Temperature
-1.1
20
On-Resistance vs. Drain Current
16
BV
DSS
(normalized)
V
GS
= -5V
R
DS(ON)
(ohms)
12
-1.0
8
V
GS
= -10V
4
-0.9
-50
0
50
100
150
0
0
-0.2
-0.4
-0.6
-0.8
-1.0
T
j
(擄C)
Transfer Characteristics
-1.0
I
D
(amperes)
V
(th)
and R
DS
Variation with Temperature
2.0
1.4
V
DS
= -25V
-0.8
T
A
= -55
擄C
R
DS(ON)
@ -10V, 0.5A
1.6
1.2
1.2
1.0
0.8
0.8
-0.6
25擄C
-0.4
125擄C
-0.2
V
(th)
@ 1mA
0.6
0.4
0
0
-2
-4
-6
-8
-10
-50
0
50
100
150
0
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
100
-10
T
j
(擄C)
Gate Drive Dynamic Characteristics
f = 1MHz
V
DS
= -10V
-8
75
C (picofarads)
V
GS
(volts)
V
DS
=
-40V
-6
101 pF
-4
50
C
ISS
25
C
OSS
C
RSS
0
0
-10
-20
-30
-40
-2
35 pF
0
0
1.0
2.0
V
DS
(volts)
Q
G
(nanocoulombs)
11/12/01
漏2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
4
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 鈥?FAX: (408) 222-4895
www.supertex.com
R
DS(ON)
(normalized)
V
GS(th)
(normalized)
I
D
(amperes)