VP2106/VP2110
Thermal Characteristics
Package
TO-236AB
TO-92
I
D
(continuous)*
-120mA
-0.25A
I
D
(pulsed)
-400mA
-0.8A
Power Dissipation
@ T
A
= 25
擄
C
0.36W
0.74W
胃
jc
擄
C/W
200
125
胃
ja
擄
C/W
350
170
I
DR
*
-120mA
-0.25A
I
DRM
-400mA
-0.8A
*
I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(@ 25擄C unless otherwise specified)
Symbol
BV
DSS
Parameter
Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
VP2110
VP2106
Min
-100
-60
-1.5
5.8
-1.0
-3.5
6.5
-100
-10
-1
I
D(ON)
R
DS(ON)
鈭哛
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1.All D.C. parameters 100% tested at 25擄C unless otherwise stated. (Pulse test: 300碌s pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Typ
Max
Unit
V
V
mV/擄C
nA
碌A(chǔ)
mA
A
Conditions
I
D
= -1.0mA, V
GS
= 0V
V
GS
= V
DS
, I
D
= -1.0mA
I
D
= -1.0mA, V
GS
= V
DS
V
GS
=
鹵20V,
V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125擄C
V
GS
= -10V, V
DS
= -25V
V
GS
= -5V, I
D
= -0.1A
V
GS
= -10V, I
D
= -0.5A
V
GS
= -10V, I
D
= -0.5A
V
DS
= -25V, I
D
= -0.5A
V
GS
= 0V, V
DS
= -25V
f = 1 MHz
V
GS(th)
鈭哣
GS(th)
I
GSS
I
DSS
ON-State Drain Current
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
-0.50
-1.0
11
9.0
0.55
15
12
1.0
鈩?/div>
%/擄C
m
150
200
45
22
3
4
5
5
4
-1.2
400
60
30
8
5
8
9
8
-2.0
pF
ns
V
ns
Switching Waveforms and Test Circuit
0V
10%
INPUT
-10V
PULSE
GENERATOR
90%
t
(ON)
R
gen
t
(OFF)
t
r
t
d(OFF)
t
F
INPUT
t
d(ON)
0V
90%
OUTPUT
V
DD
90%
10%
10%
2
鈩?/div>
V
DD
= -25V
I
D
= -0.5A
R
GEN
= 25鈩?/div>
I
SD
= -0.5A, V
GS
= 0V
I
SD
= -0.5A, V
GS
= 0V
D.U.T.
OUTPUT
R
L
V
DD
1
2
3
4
