TN2106
Thermal Characteristics
Package
TO-236AB
TO-92
I
D
(continuous)*
0.28A
0.30A
I
D
(pulsed)
0.8A
1.0A
Power Dissipation
@ T
A
= 25
擄
C
0.36W
0.74W
胃
jc
擄
C/W
200
125
胃
ja
擄
C/W
350
170
I
DR
*
0.28A
0.30A
I
DRM
0.8A
1.0A
*
I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(@ 25擄C unless otherwise specified)
Symbol
BV
DSS
V
GS(th)
鈭哣
GS(th)
I
GSS
I
DSS
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
Min
60
0.6
-3.8
0.1
2.0
-5.5
100
1
100
I
D(ON)
R
DS(ON)
鈭哛
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
ON-State Drain Current
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
150
0.70
400
35
17
7
3
5
6
5
1.2
400
50
25
8
5
8
9
8
1.8
V
ns
I
SD
= 0.5A, V
GS
= 0V
I
SD
= 0.5A, V
GS
= 0V
ns
V
DD
= 25V
I
D
= 0.5A
R
GEN
= 25鈩?/div>
pF
V
GS
= 0V, V
DS
= 25V, f = 1MHz
0.6
5.0
2.5
1.0
Typ
Max
Unit
V
V
mV/擄C
nA
碌A(chǔ)
碌A(chǔ)
A
鈩?/div>
鈩?/div>
%/擄C
m
鈩?/div>
Conditions
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 1mA
I
D
= 1mA, V
GS
= V
DS
V
GS
=
鹵20V,
V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125擄C
V
GS
= 10V, V
DS
= 25V
V
GS
= 4.5V, I
D
= 200mA
V
GS
= 10V, I
D
= 500mA
V
GS
= 10V, I
D
= 500mA
V
DS
= 25V, I
D
= 500mA
Notes:
1. All D.C. parameters 100% tested at 25擄C unless otherwise stated. (Pulse test: 300碌s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
V
DD
10V
90%
INPUT
0V
10%
t
(ON)
t
d(ON)
V
DD
OUTPUT
0V
90%
90%
t
r
t
(OFF)
t
d(OFF)
t
F
D.U.T.
10%
10%
INPUT
PULSE
GENERATOR
R
gen
R
L
OUTPUT
7-72
SUPERTEX
1
2
3
4
