TN0104
Typical Performance Curves
BV
DSS
Variation with Temperature
1.3
10
On-Resistance vs. Drain Current
V
GS
= 5V
1.2
8
BV
DSS
(normalized)
R
DS(ON)
(ohms)
1.1
6
1.0
4
V
GS
= 10V
0.9
2
0.8
-50
0
50
100
150
0
0
1
2
T
j
(
擄
C)
Transfer Characteristics
3.0
I
D
(amperes)
V
(th)
and R
DS
Variation with Temperature
1.4
1.4
T
A
= -55
擄
C
V
DS
= 25V
2.4
25
擄
C
1.2
1.2
1.8
125
擄
C
1.0
R
DS(ON)
@ 5V, 0.25A
1.0
1.2
0.8
V
(th)
@ 0.5mA
0.8
0.6
0.6
0.6
0
0.4
0
2
4
6
8
10
-50
0
50
100
150
0.4
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
100
10
T
j
(
擄
C)
Gate Drive Dynamic Characteristics
V
DS
= 10V
8
f = 1MHz
75
55pF
C (picofarads)
V
GS
(volts)
40V
6
C
ISS
50
4
25
C
OSS
2
C
RSS
0
0
10
20
30
40
0
0.5
0.65
50pF
0.8
0.95
1.1
1.25
V
DS
(volts)
Q
G
(nanocoulombs)
7-34
R
DS(ON)
(normalized)
V
GS(th)
(normalized)
I
D
(amperes)