鈥?/div>
I
DR
30mA
30mA
I
DRM
*
30mA
30mA
* I
D
(continuous) is limited by max rated T
f
.
鈥?Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Electrical Characteristics
(@ 25擄C unless otherwise specified)
Symbol
BV
DSX
V
GS(OFF)
I
GSS
I
D(OFF)
Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source OFF Voltage
Min
500
-1.0
-3.0
5.0
100
100
100
I
DSS
R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
tr
t
d(OFF)
t
f
V
SD
t
rr
Saturated Drain-to-Source Current
Static Drain-to-Source ON-State Resistance
1.0
850
3.0
1000
1.2
1.0
2.0
7.5
2.0
0.5
0.09
0.45
0.1
1.3
0.9
200
V
ns
V
GS
= -10V, I
SD
= 1.0mA
V
GS
= -10V, I
SD
= 1.0mA
碌s
V
DD
= 25V, I
D
= 1.0mA,
R
GEN
= 25鈩?/div>
10
3.5
1.0
pF
V
GS
= -10V, V
DS
= 25V
f = 1 MHz
Typ
Max
Unit
V
V
mV/擄C
nA
nA
碌A(chǔ)
mA
鈩?/div>
%/擄C
m
Conditions
V
GS
= -10V, I
D
= 1.0mA
V
DS
= 25V, I
D
= 100nA
V
DS
= 25V, I
D
= 100nA
V
GS
=
鹵20V,
V
DS
= 0V
V
GS
= -10V, V
DS
= 450V
V
GS
= -10V, V
DS
= 0.8V max rating
T
A
=125擄C
V
GS
= 0V, V
DS
= 25V
V
GS
= 0V, I
D
= 0.5mA
V
GS
= 0V, I
D
= 0.5mA
V
GS
= 0V, I
D
= 1.0mA
鈭哣
GS(OFF)
Change in V
GS(OFF)
with Temperature
Gate Body Leakage Current
Drain-to-Source Leakage Current
鈭哛
DS(ON)
Change in RDS(ON) with Temperature
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
Notes:
1. All D.C. parameters 100% tested at 25擄C unless otherwise stated. (Pulse test: 300碌s pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
90%
10%
t
(ON)
t
d(ON)
t
r
t
(OFF)
t
d(OFF)
t
F
10%
INPUT
-10V
PULSE
GENERATOR
R
gen
V
DD
10%
INPUT
OUTPUT
0V
90%
90%
2
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