鈥?/div>
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR4 board, 25mm x 25mm x 1.57mm.
Electrical Characteristics
(@ 25擄C unless otherwise specified)
Symbol
BV
DSS
V
GS(th)
鈭哣
GS(th)
I
GSS
I
DSS
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
Min
-16.5
-0.5
-0.7
-1.0
-4.0
-100
-100
-1.0
-0.4
I
D(ON)
ON-State Drain Current
-0.6
-1.25
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
-1.2
500
700
120
100
40
250
125
60
20
20
30
30
-1.5
V
V
GS
= 0V, I
SD
= -500mA
ns
V
DD
=-15V, I
D
= -1.25A,
R
GEN
= 25鈩?/div>
pF
V
GS
= 0V, V
DS
= -15V, f = 1MHz
-1.0
-2.3
2.0
R
DS(ON)
鈭哛
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
1.7
1.3
4.0
2.0
1.5
0.75
%/擄C
m
鈩?/div>
A
鈩?/div>
Typ
Max
Unit
V
V
mV/擄C
nA
nA
mA
A
Conditions
V
GS
= 0V, I
D
= -1mA
V
GS
= V
DS
, I
D
= -1mA
V
GS
= V
DS
, I
D
= -1mA
V
GS
=
鹵10V,
V
DS
= 0V
V
DS
= -15V, V
GS
= 0V
V
DS
= 0.8 Max Rating,
V
GS
= 0V, TA = 125擄C
V
GS
= V
DS
= -2V
V
GS
= V
DS
= -3V
V
GS
= V
DS
= -5V
V
GS
= -2V, I
D
= -50mA
V
GS
= -3V, I
D
= -150mA
V
GS
= -5V, I
D
= -300mA
V
GS
= -5V, I
D
= -300mA
V
DS
= -15V, I
D
= -1A
Note 1: All D.C. parameters 100% tested at 25擄C unless otherwise stated. (Pulse test: 300碌s pulse, 2% duty cycle.)
Note 2: All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
INPUT
-10V
t
(ON)
t
d(ON)
0V
90%
OUTPUT
V
DD
10%
10%
V
DD
90%
t
r
90%
t
(OFF)
t
d(OFF)
t
F
INPUT
R
L
D.U.T.
OUTPUT
10%
PULSE
GENERATOR
R
gen
7-24
1
2
3
4
