IS-705RH
Die Characteristics
DIE DIMENSIONS:
1500碌m x 1830碌m (59 mils x 72 mils)
Thickness: 483碌m
鹵
25.4碌m (19 mils
鹵
1 mil)
INTERFACE MATERIALS
Glassivation
Type: Nitride (Si
3
N
4
) over Silox (SiO
2
)
Nitride Thickness: 4.0k脜
鹵
1.0k脜
Silox Thickness: 12.0k脜
鹵
4.0k脜
Top Metallization
Top Metal 3: TiAlCu
Thickness: 0.8碌m
鹵0.02碌m
Metal 1 and 2: TiAlCu
Thickness: 0.4碌m
鹵0.01碌m
Substrate:
UHF2X-CMOS
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential:
Backside internally connected to GND
(May be left floating or connected to GND.)
ADDITIONAL INFORMATION
Worst Case Current Density:
<2.0 x 10
5
A/cm
2
Metallization Mask Layout
IS-705RH
MR (1)
WDO (8)
VCC (2)
RESET (7)
GND (3)
WDI (6)
PFI (4)
PFO (5)
NOTES:
1. Octagonal trim pads should be left unconnected.
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2
INTERSIL
1
2
