鈥?/div>
I
DR
*
-260mA
I
DRM
-2.0A
*
I
D
(continuous) is limited by max rated T
j
.
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P
D
increase possible on ceramic substrate.
Electrical Characteristics
(@ 25擄C unless otherwise specified)
Symbol
BV
DSS
Parameter
Drain-to-Source
Breakdown Voltage
TP2522
TP2520
V
GS(th)
鈭哣
GS(th)
I
GSS
I
DSS
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
Min
-220
V
-200
-1.0
-2.4
4.5
-100
-10
-1.0
I
D(ON)
R
DS(ON)
鈭哛
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1.All D.C. parameters 100% tested at 25擄C unless otherwise stated. (Pulse test: 300碌s pulse, 2% duty cycle.)
2.All A.C. parameters sample tested.
Typ
Max
Unit
Conditions
V
GS
= 0V, I
D
= -2mA
V
GS
= V
DS
, I
D
= -1mA
V
GS
= V
DS
, I
D
= -1mA
V
GS
=
鹵
20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125擄C
V
GS
= -4.5V, V
DS
= -25V
V
GS
= -10V, V
DS
= -25V
V
GS
= -4.5V, I
D
= -100mA
V
GS
= -10V, I
D
= -200mA
V
GS
= -10V, I
D
= -200mA
V
DS
= -25V, I
D
= -200mA
V
GS
= 0V, V
DS
= -25V
f = 1 MHz
V
mV/擄C
nA
碌A(chǔ)
mA
ON-State Drain Current
-0.25
-0.75
-0.7
-2.1
10
8.0
15
12
1.7
A
鈩?/div>
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
100
%/擄C
m
250
75
20
10
125
85
35
10
15
20
15
-1.8
300
pF
ns
V
ns
Switching Waveforms and Test Circuit
0V
10%
INPUT
-10V
PULSE
GENERATOR
90%
t
(ON)
R
gen
t
(OFF)
t
r
t
d(OFF)
t
F
INPUT
t
d(ON)
0V
90%
OUTPUT
V
DD
90%
10%
10%
2
鈩?/div>
V
DD
= -25V,
I
D
= -0.75A,
R
GEN
= 25鈩?/div>
V
GS
= 0V, I
SD
= -0.5A
V
GS
= 0V, I
SD
= -0.5A
D.U.T.
OUTPUT
R
L
V
DD
SUPERTEX
1
2
3
4
