TN2425
Typical Performance Curves
BV
DSS
Variation with Temperature
1.2
BV @ 250碌A(chǔ)
10
On Resistance vs. Drain Current
BVDSS (Normalized)
8
VGS = 4.5V
RDS(ON) (ohms)
1.1
6
1.0
4
VGS = 10V
0.9
2
0.8
-50
0
0
50
100
150
0
1
2
3
4
5
TJ (
擄
C)
Transfer Characteristics
3.0
TA = 25擄C
ID (Amperes)
VGS(TH) and RDS(ON) w/ Temperature
2.0
1.8
RDS(ON) @ 10V, 0.5A
1.8
1.6
1.4
1.2
1.0
0.8
VGS(th) @ 1mA
1.5
2.0
TA = -55擄C
1.5
TA = 125擄C
1.2
1.0
0.9
0.5
VDS = 25V
0.6
0.4
-50
0
50
100
0.6
150
0.0
0
2
4
6
8
10
VGS (Volts)
Capacitance vs. Drain Source Voltage
200
f = 1MHz
TJ (
擄
C)
Gate Drive Dynamic Characteristics
10
ID = 480mA
8
150
VDS=10V
C (picofarads)
V
GS
(volts)
CISS
100
6
VDS=40V
453pF
4
50
COSS
CRSS
0
0
10
20
30
40
50
2
128pF
0
0.0
1.0
2.0
3.0
4.0
5.0
VDS (Volts)
Q
G
(nanocoulombs)
RDS(ON) (normalized)
11/12/01
VGS(th) (normalized)
2.5
ID (Amperes)
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4
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