VGS =10V, RG = 9.1鈩?/div>
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (鈥楳iller鈥? Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from drain lead (6mm/
0.25in. from package) to source lead
(6mm/0.25in. from package)
VGS = 0V, VDS = 25V
f = 1.0MHz
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
鈥?/div>
鈥?/div>
鈥?/div>
2400
1100
230
鈥?/div>
鈥?/div>
鈥?/div>
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
鉃€
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
35*
180
2.5
220
1.6
Test Conditions
A
V
nS
碌C
T
j
= 25擄C, IS = 35A, VGS = 0V
鉃?/div>
Tj = 25擄C, IF = 35A, di/dt
鈮?/div>
100A/碌s
VDD
鈮?/div>
50V
鉃?/div>
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
*Current is limited by pin diameter
Thermal Resistance
Parameter
RthJC
RthJCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
0.21
鈥?/div>
1.0
鈥?/div>
48
擄C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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