鈭?/div>
鈭?5
鈭?5
PARAMETER
CONDITIONS
MIN.
PMEM4010ND
MAX.
UNIT
40
40
5
1
2
1
150
V
V
V
A
A
A
擄C
V
A
A
擄C
mW
擄C
擄C
Schottky barrier diode
continuous reverse voltage
continuous forward current
non repetitive peak forward current
junction temperature
20
1
5
125
Combined device
total power dissipation
storage temperature
operating ambient temperature
600
+150
+125
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses
P
R
are significant part of the total power losses. Nomograms for determination of the reverse power losses P
R
and
I
F
(AV) rating will be available on request.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
in free air; note 1
VALUE
208
UNIT
K/W
2003 Jul 04
3