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PMEM4010ND Datasheet

  • PMEM4010ND

  • NPN transistor/Schottky diode module

  • 10頁

  • ETC

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Philips Semiconductors
Product speci鏗乧ation
NPN transistor/Schottky diode module
FEATURES
鈥?/div>
600 mW total power dissipation
鈥?/div>
High current capability
鈥?/div>
Reduces required PCB area
鈥?/div>
Reduced pick and place costs
鈥?/div>
Small plastic SMD package.
Transistor:
鈥?/div>
Low collector-emitter saturation voltage.
Diode:
鈥?/div>
Ultra high-speed switching
鈥?/div>
Very low forward voltage
鈥?/div>
Guard ring protected.
handbook, halfpage
6
PMEM4010ND
PINNING
PIN
1
2
3
4
5
6
emitter
not connected
cathode
anode
base
collector
DESCRIPTION
5
4
4
3
6
APPLICATIONS
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DC/DC convertors
鈥?/div>
Inductive load drivers
鈥?/div>
General purpose load drivers
鈥?/div>
Reverse polarity protection circuits.
DESCRIPTION
Combination of an NPN transistor with low V
CEsat
and high
current capability and a planar Schottky barrier diode with
an integrated guard ring for stress protection in a SOT457
(SC-74) small plastic package.
PNP complement: PMEM4010PD.
Marking code:
B3.
5
1
1
2
3
MGU865
Fig.1 Simplified outline (SOT457) and symbol.
2003 Jul 04
2

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