SLUS593B 鈭?DECEMBER 2003 鈭?REVISED APRIL 2004
TPS40054
TPS40055
TPS40057
DESIGN EXAMPLE
4. Calculate the power losses
Power losses in the high-side MOSFET (Si7860DP) at 24-V
IN
where switching losses dominate can be
calculated from equation (51).
I
RMS
+
I
O
d
+
8
0.135
+
2.93 A
(51)
substituting (34) into (33) yields
P
COND
+
2.93
2
0.008
(1
)
0.007
(150
*
25))
+
0.129 W
(52)
and from equation (33), the switching losses can be determined.
P
SW(fsw)
+
V
IN
I
O
t
SW
f
SW
+
24 V
8A
20 ns
300 kHz
+
1.152 W
(53)
The MOSFET junction temperature can be found by substituting equation (35) into equation (34)
T
J
+
P
COND
)
P
SW
q
JA
)
T
A
+
(0.129
)
1.152)
40
)
85
+
136 C
O
(54)
5. Calculate synchronous rectifier losses
The synchronous rectifier MOSFET has two (2) loss components, conduction, and diode reverse recovery
losses. The conduction losses are due to I
RMS
losses as well as body diode conduction losses during the dead
time associated with the anti-cross conduction delay.
The I
RMS
current through the synchronous rectifier from (38)
I
RMS
+
I
O
1
*
d
+
8
1
*
0.135
+
7.44 A
RMS
(55)
The synchronous MOSFET conduction loss from (33) is:
P
COND
+
I
RMS
2
R
DS(on)
+
7.44
2
0.008
(1
)
0.007(150
*
25))
+
0.83 W
(56)
The body diode conduction loss from (39) is:
P
DC
+
2
I
O
V
FD
t
DELAY
f
SW
+
2
8.0 A
0.8 V
100 ns
300 kHz
+
0.384 W
(57)
The body diode reverse recovery loss from (40) is:
P
RR
+
0.5
Q
RR
V
IN
f
SW
+
0.5
30 nC
24 V
300 kHz
+
0.108 W
(58)
The total power dissipated in the synchronous rectifier MOSFET from (41) is:
P
SR
+
P
RR
)
P
COND
)
P
DC
+
0.108
)
0.83
)
0.384
+
1.322 W
The junction temperature of the synchronous rectifier at 85擄C is:
T
J
+
P
SR
q
JA
)
T
A
+
(1.322)
40
)
85
+
139
o
C
(60)
(59)
In typical applications, paralleling the synchronous rectifier MOSFET with a Schottky rectifier increases the
overall converter efficiency by approximately 2% due to the lower power dissipation during the body diode
conduction and reverse recovery periods.
www.ti.com
27