SLUS593B 鈭?DECEMBER 2003 鈭?REVISED APRIL 2004
TPS40054
TPS40055
TPS40057
APPLICATION INFORMATION
TPS4005X POWER DISSIPATION
The power dissipation in the TPS4005x is largely dependent on the MOSFET driver currents and the input
voltage. The driver current is proportional to the total gate charge, Qg, of the external MOSFETs. Driver power
(neglecting external gate resistance, refer to [2] can be calculated from equation (40).
P
D
+
Q
g
V
DR
f
SW
(Watts driver)
(40)
And the total power dissipation in the TPS4005x, assuming the same MOSFET is selected for both the high-side
and synchronous rectifier is described in equation (41).
P
T
+
or
P
T
+
2
where:
Q
g
f
SW
)
I
Q
V
IN
(Watts)
(42)
2
P
D
V
DR
)
I
Q
V
IN
(Watts)
(41)
D
I
Q
is the quiescent operating current (neglecting drivers)
The maximum power capability of the device鈥檚 PowerPad package is dependent on the layout as well as air flow.
The thermal impedance from junction to air, assuming 2 oz. copper trace and thermal pad with solder and no
air flow.
q
JA
+
36.515 C W
O
(43)
The maximum allowable package power dissipation is related to ambient temperature by equation (44).
P
T
+
T
J
*
T
A
(Watts)
q
JA
(44)
Substituting equation (37) into equation (35) and solving for f
SW
yields the maximum operating frequency for
the TPS4005x. The result is described in equation (45).
T
J
*T
A
q
JA
V
DD
f
SW
+
2
Q
g
*
I
Q
(Hz)
(45)
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