SLUS593B 鈭?DECEMBER 2003 鈭?REVISED APRIL 2004
TPS40054
TPS40055
TPS40057
A
PPLICATION INFORMATION
SYNCHRONOUS RECTIFIER MOSFET POWER DISSIPATION
The power dissipated in the synchronous rectifier MOSFET is comprised of three components: R
DS(on)
conduction losses, body diode conduction losses, and reverse recovery losses. R
DS(on
) conduction losses can
be found using equation (29) and the RMS current through the synchronous rectifier MOSFET is described in
equation (36).
I
RMS
+
I
O
1
*
d
Amperes
RMS
(36)
The body-diode conduction losses are due to forward conduction of the body diode during the anti鈭抍ross
conduction delay time. The body diode conduction losses are described by equation (37).
P
DC
+
2
where:
I
O
V
F
t
DELAY
f
SW
(Watts)
(37)
D
V
F
is the body diode forward voltage
D
t
DELAY
is the delay time just before the SW node rises
The 2-multiplier is used because the body diode conducts twice during each cycle (once on the rising edge and
once on the falling edge). The reverse recovery losses are due to the time it takes for the body diode to recovery
from a forward bias to a reverse blocking state. The reverse recovery losses are described in equation (38).
P
RR
+
0.5
where:
Q
RR
V
IN
f
SW
(Watts)
(38)
D
Q
RR
is the reverse recovery charge of the body diode
The Q
RR
is not always described in a MOSFET鈥檚 data sheet, but may be obtained from the MOSFET vendor.
The total synchronous rectifier MOSFET power dissipation is described in equation (39).
P
SR
+
P
DC
)
P
RR
)
P
COND
(Watts)
(39)
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