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TPS40055 Datasheet

  • TPS40055

  • 寬輸入 (8V-40V) 最高頻率 1MHz 的同步降壓控制器，具有輸出驅(qū)動...

  • 34頁

  • TI

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SLUS593B 鈭?DECEMBER 2003 鈭?REVISED APRIL 2004
TPS40054
TPS40055
TPS40057
A
PPLICATION INFORMATION
CALCULATING THE BOOST AN BP10 BYPASS CAPACITOR
The BOOST capacitance provides a local, low impedance source for the high-side driver. The BOOST capacitor
should be a good quality, high-frequency capacitor. The size of the bypass capacitor depends on the total gate
charge of the MOSFET and the amount of droop allowed on the bypass capacitor. The BOOST capacitance
is described in equation (29).
C
BOOST
+
Q
g
(Farads)
DV
(29)
The 10-V reference pin, BP10V provides energy for both the synchronous MOSFET and the high-side MOSFET
via the BOOST capacitor. Neglecting any efficiency penalty, the BP10V capacitance is described in equation
(30).
C
BP10
+
Q
gHS
)
Q
gSR
DV
(Farads)
(30)
dv/dt INDUCED TURN-ON
MOSFETs are susceptible to dv/dt turn-on particularly in high-voltage (V
DS
) applications. The turn-on is caused
by the capacitor divider that is formed by C
GD
and C
GS
. High dv/dt conditions and drain-to-source voltage, on
the MOSFET causes current flow through C
GD
and causes the gate-to-source voltage to rise. If the
gate-to-source voltage rises above the MOSFET threshold voltage, the MOSFET turns on, resulting in large
shoot-through currents. Therefore, the SR MOSFET should be chosen so that the C
GD
capacitance is smaller
than the C
GS
capacitance.
HIGH SIDE MOSFET POWER DISSIPATION
The power dissipated in the external high-side MOSFET is comprised of conduction and switching losses. The
conduction losses are a function of the I
RMS
current through the MOSFET and the R
DS(on)
of the MOSFET. The
high-side MOSFET conduction losses are defined by equation (31).
P
COND
+
I
RMS
where:
2
R
DS(on)
1
)
TC
R
T
J
*
25 C
O
(Watts)
(31)
D
TC
R
is the temperature coefficient of the MOSFET R
DS(on)
The TC
R
varies depending on MOSFET technology and manufacturer, but typically ranges between
.0035 ppm/_C and .010 ppm/_C.
The I
RMS
current for the high side MOSFET is described in equation (32).
I
RMS
+
I
OUT
d
A
RMS
(32)
20
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