The total power dissipation in the TPS40074, assuming the same MOSFET is selected for both the high-side and
Equation 13.
鈥?/div>
I
Q
is the quiescent operating current (neglecting drivers)
The maximum power capability of the TPS40074 PowerPAD package is dependent on the layout as well as air
flow. The thermal impedance from junction to air ambient assuming 2-oz. copper trace and thermal pad with
solder and no air flow is
胃
JA
= 60 擄C/W
The maximum allowable package power dissipation is related to ambient temperature by
Equation 15.
T
*
T
A
P
T
+
J
(Watts)
q
JA
(15)
Substituting
Equation 15
into
Equation 14
and solving for f
SW
yields the maximum operating frequency for the
TPS4007x. The result is described in
Equation 16.
T
J
*T
A
q
JA
f
SW
+
2
V
IN
Q
g
*
I
Q
(Hz)
(16)
BOOST DIODE
The TPS40074 has internal diodes to charge the boost capacitor connected from SW to BOOST. The drop
across this diode is rather large at 1.4-V nominal at room temperature resulting in the drive voltage to the
high-side MOSFET being reduced by this amount from the DBP voltage. If this drop is too large for a particular
application, an external diode may be connected from DBP (anode) to BOOST (cathode). This provides
significantly improved gate drive for the high-side MOSFET, especially at lower input voltages.
LOW VOLTAGE OPERATION
If the programmable UVLO is set to less than 6.5 V nominal, connect a 330-k鈩?resistor across the soft-start
capacitor. This eliminates a race condition inside the device that can lead to an output voltage overshoot on
power down of the part.
19