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ZXTDE4M832

MPPS鈩?Miniature Package Power Solutions

DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR

COMBINATION

SUMMARY

NPN Transistor

PNP Transistor

DESCRIPTION

Packaged in the new innovative 3mm x 2mm MLP (Micro Leaded Package),

these low saturation NPN / PNP combination dual transistors offer lower on

state losses making them ideal for use in DC-DC circuits and various driving

and power-management functions.

Users will also gain several other

key benefits:

Performance capability equivalent to much larger packages

Improved circuit efficiency & power levels

PCB area and device placement savings

Lower package height (0.9mm nom)

Reduced component count

3mm x 2mm Dual Die MLP

V

CEO

= 80V; R

SAT

= 68m ;

C

= 3.5A

V

CEO

= -70V; R

SAT

= 117m ;

C

= -2.5A

C2

C1

FEATURES

鈥?/div>

Low Equivalent On Resistance

鈥?/div>

Extremely Low Saturation Voltage

(-185mV max @ 1A--NPN)

鈥?/div>

H

FE

specified up to -5A

鈥?/div>

I

C

= -3.5A Continuous Collector Current

鈥?/div>

3mm x 2mm MLP

B2

B1

E2

E1

APPLICATIONS

鈥?/div>

DC - DC Converters

鈥?/div>

Charging circuits

鈥?/div>

Power switches

鈥?/div>

Motor control

PINOUT

ORDERING INFORMATION

DEVICE

ZXTDE4M832TA

ZXTDE4M832TC

REEL

7

13

TAPE

WIDTH

8mm

QUANTITY

PER REEL

3000

10000

3mm x 2mm Dual MLP

underside view

DEVICE MARKING

DE4

ISSUE 1 - JUNE 2002

1

標(biāo)準(zhǔn)包裝
3,000
類別
分離式半導(dǎo)體產(chǎn)品
家庭
晶體管(BJT) - 陣列
系列
-
晶體管類型
NPN，PNP
電流 - 集電極 (Ic)（最大）
3.5A，2.5A
電壓 - 集電極發(fā)射極擊穿（最大）
80V，70V
Ib、Ic條件下的Vce飽和度（最大）
325mV @ 300mA，3.5A / 260mV @ 200mA，1.5A
電流 - 集電極截止（最大）
25nA
在某 Ic、Vce 時的最小直流電流增益 (hFE)
300 @ 200mA，2V / 40 @ 1.5A，5V
功率 - 最大
1W
頻率 - 轉(zhuǎn)換
160MHz，180MHz
安裝類型
表面貼裝
封裝/外殼
8-MLP
供應(yīng)商設(shè)備封裝
8-MLP（3x2）
包裝
帶卷 (TR)
其它名稱
ZXTDE4M832TATR

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描述

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