SOT323 SILICON PLANAR DUAL
SCHOTTKY BARRIER DIODES
ISSUE 1 - NOVEMBER 1998
.
7
ZUMD70-04
ZUMD70-05
3
2
!
!
1
SERIES PAIR
Device Type:
ZUMD70-04
Partmarking Detail:
D94
COMMON CATHODE
Device Type:
ZUMD70-05
Partmarking Detail:
D95
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
P
tot
T
j
:T
stg
VALUE
330
-55 to +150
UNIT
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
Breakdown Voltage
Reverse Leakage Current
Forward Voltage
Forward Current
Capacitance
Effective Minority Lifetime
(1)
(1) Sample Test
SYMBOL
V
BR
I
R
V
F
I
F
C
T
蟿
15
2.0
100
MIN.
70
200
410
MAX.
UNIT
V
nA
mV
mA
pF
ps
CONDITIONS.
I
R
=10碌A(chǔ)
V
R
=50V
I
F
=1mA
V
F
=1V
f=1MHz, V
R
=0
f=54MHz, I
pk
= 20mA
(Krakauer Test Method)
For typical characteristics graphs see ZC2800E datasheet.
1
