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PNP SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ISSUE 1 聳 APRIL 94

FEATURES

* 200 Volt V

CEO

* Gain of 250 at I

C

=0.3 Amps

* Very low saturation voltage

ZTX796A

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Practical Power Dissipation*

Power Dissipation

at T

amb

=25擄C

derate above 25擄C

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

totp

P

tot

T

j

:T

stg

-200

-200

-5

-1

-0.5

1.5

1

5.7

E-Line

TO92 Compatible

VALUE

UNIT

V

V

V

A

A

W

W

mW/擄C

擄C

Operating and Storage Temperature Range

-55 to +200

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

amb

= 25擄C)

PARAMETER

Collector-Base Breakdown

Voltage

Collector-Emitter Breakdown

Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter Saturation

Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn-On Voltage

Static Forward Current

Transfer Ratio

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

300

300

250

100

3-288

-0.67

800

MIN.

-200

-200

-5

-0.1

-0.1

-0.2

-0.3

-0.3

-0.95

TYP.

MAX.

UNIT

V

V

V

碌

A

碌

A

CONDITIONS.

I

C

=-100

碌

A

I

C

=-10mA*

I

E

=-100

碌

A

V

CB

=-150V

V

EB

=-4V

I

C

=-50mA, I

B

=-2mA*

I

C

=-100mA, I

B

=-5mA*

I

C

=-200mA, I

B

=-20mA*

I

C

=-200mA, I

B

=-20mA*

IC=-200mA, V

CE

=-10V*

I

C

=-10mA, V

CE

=-10V*

I

C

=-100mA, V

CE

=-10V*

I

C

=-300mA, V

CE

=-10V*

I

C

=-400mA, V

CE

=-10V*

V

V

V

V

V

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