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NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 2 聳 APRIL 94

FEATURES

* 25 Volt V

CEO

* 2 Amp continuous current

* Low saturation voltage

* P

tot

=1 Watt

APPLICATIONS

* Motor driver

* DC-DC converters

ZTX649

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T

amb

=25擄C

derate above 25擄C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

35

25

5

6

2

E-Line

TO92 Compatible

VALUE

UNIT

V

V

V

A

A

W

mW/ 擄C

擄C

1

5.7

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

amb

= 25擄C unless otherwise stated).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn-On Voltage

Static Forward Current

Transfer Ratio

SYMBOL MIN.

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

35

25

5

0.1

10

0.1

0.12

0.23

0.9

0.8

70

100

75

15

150

200

200

150

50

240

0.3

0.5

1.25

1

TYP.

MAX.

UNIT

V

V

V

碌

A

碌

A

碌

A

CONDITIONS.

I

C

=100

碌

A

I

C

=10mA*

I

E

=100

碌

A

V

CB

=30V

V

CB

=30V,

T

amb

=100擄C

V

EB

=4V

I

C

=1A, I

B

=100mA*

I

C

=2A, I

B

=200mA*

I

C

=1A, I

B

=100mA*

IC=1A, V

CE

=2V*

I

C

=50mA, V

CE

=2V*

I

C

=1A, V

CE

=2V*

I

C

=2A, V

CE

=2V*

I

C

=6A, V

CE

=2V*

Emitter Cut-Off Current I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

V

V

V

V

300

Transition Frequency

f

T

MHz

I

C

=100mA, V

CE

=5V

f=100MHz

3-216

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