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NPN SILICON PLANAR MEDIUM POWER

DARLINGTON TRANSISTORS

ISSUE 2 聳 JUNE 94

FEATURES

* 160 Volt V

CEO

* 1 Amp continuous current

* Gain of 5K at I

C

=1 Amp

* P

tot

= 1 Watt

ZTX600

ZTX601

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation

at T

amb

=25擄C

derate above 25擄C

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

P

tot

T

j

:T

stg

ZTX600

160

140

10

4

1

1

5.7

E-Line

TO92 Compatible

ZTX601

180

160

UNIT

V

V

V

A

A

W

mW/ 擄C

擄C

Operating and Storage Temperature Range

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

amb

= 25擄C unless otherwise stated).

PARAMETER

SYMBOL

160

140

10

0.01

10

I

EBO

I

CES

V

CE(sat)

V

BE(sat)

V

BE(on)

0.75

0.85

1.7

1.5

0.1

10

1.1

1.2

1.9

1.7

3-206

0.75

0.85

1.7

1.5

ZTX600

MIN. TYP.

Collector-Base

V

(BR)CBO

Breakdown Voltage

Collector-Emitter

V

(BR)CEO

Breakdown Voltage

Emitter-Base

V

(BR)EBO

Breakdown Voltage

Collector Cut-Off

Current

I

CBO

180

160

10

ZTX601

MAX. MIN. TYP.

MAX.

V

V

V

碌

A

碌

A

碌

A

碌

A

碌

A

碌

A

碌

A

UNIT CONDITIONS.

I

C

=100

碌

A

I

C

=10mA*

I

E

=100

碌

A

V

CB

=140V

V

CB

=160V

V

CB

=140V,

T

=

=100擄C

V

CB

=160V,

T

=

=100擄C

V

EB

=8V

V

CES

=140V

V

CES

=160V

I

C

=0.5A, I

B

=5mA*

I

C

=1A, I

B

=10mA*

I

C

=1A, I

B

=10mA*

IC=1A, V

CE

=5V*

0.01

10

0.1

Emitter Cut-Off

Current

Colllector-Emitter

Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn-On Voltage

10

1.1

1.2

1.9

1.7

V

V

V

V

next

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