PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 聳 MARCH 94
ZTX537C
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
E-Line
TO92 Compatible
VALUE
-50
-45
-5
-1
-800
750
-55 to +175
UNIT
V
V
V
A
mA
mW
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
MIN. TYP.
-50
-45
-5
-100
-0.2
-0.7
-1.2
250
170
200
12
630
MHz
pF
MAX.
UNIT
V
V
V
nA
碌
A
CONDITIONS.
I
C
=-100
碌
A
I
C
=-100
碌
A
I
E
=-100
碌
A, I
E
=0
V
CB
=-45V
V
EB
=-4V
I
C
=-500mA, I
B
=-50mA*
I
C
=-300mA, V
CE
=-1V*
I
C
=-100mA, V
CE
=-1V*
I
C
=-300mA, V
CE
=-1V*
I
C
=-10mA, V
CE
=-5V
f=50MHz
V
CB
=-10V, f=1MHz
Emitter Cut-Off Current I
EBO
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V
CE(sat)
V
BE(on)
V
V
Static Forward Current h
FE
Transfer Ratio
Transition Frequency
Output Capacitance
f
T
Cobo
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
1
