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NPN SILICON PLANAR MEDIUM POWER

HIGH VOLTAGE TRANSISTOR

ISSUE 2 聳 MARCH 1994

FEATURES

* 400 Volt V

CEO

* 0.5 Amp continuous current

* P

tot

= 1 Watt

ZTX458

C

B

E

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation at T

amb

=25擄C

Operating and Storage Temperature Range

PARAMETER

SYMBOL

V

(BR)CBO

V

CEO(sus)

V

(BR)EBO

I

CBO

I

CES

I

EBO

V

CE(sat)

V

BE(sat)

V

BE(on)

h

FE

f

T

C

obo

100

100

15

50

5

MIN.

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

j

:T

stg

TYP.

MAX.

E-Line

TO92 Compatible

VALUE

400

400

5

300

1

-55 to +200

UNIT

V

V

V

100

100

100

0.2

0.5

0.9

0.9

300

MHz

pF

nA

nA

nA

V

V

V

V

CONDITIONS.

I

C

=100

碌

A

I

C

=10mA*

I

E

=100

碌

A

V

CB

=320V

VCE=320V

V

EB

=4V

I

C

=20mA, I

B

=2mA

I

C

=50mA, I

B

=6mA

I

C

=50mA, I

B

=5mA

IC=50mA, V

CE

=10V

I

C

=1mA, V

CE

=10V

I

C

=50mA, V

CE

=10V

I

C

=100mA, V

CE

=10V*

I

C

=10mA, V

CE

=20V

f=20MHz

V

CB

=20V, f=1MHz

UNIT

V

V

V

mA

W

擄C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25擄C).

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Collector Cut-Off

Current

Emitter Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Base-Emitter

Turn On Voltage

Static Forward Current

Transfer Ratio

Transition Frequency

Collector-Base

Breakdown Voltage

400

400

5

3-182

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