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NPN SILICON PLANAR

RF TRANSISTOR

ISSUE 2 聳 MARCH 94

FEATURES

* High f

T

, 1.3GHz

* Low noise < 5dB at 500MHz

* Power output at 500MHz >175mW

ZTX325

C

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Mean Collector Current (Averaged over 100

碌

s)

Collector Current

Power Dissipation at T

amb

=25擄C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

AV

I

CM

P

tot

T

j

:T

stg

30

15

2.5

25

50

350

E-Line

TO92 Compatible

VALUE

UNIT

V

V

V

mA

mA

mW

擄C

E

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

amb

= 25擄C unless otherwise stated).

PARAMETER

Collector-Emitter

Sustaining Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Static Forward Current

Transfer Ratio

Transition Frequency

Capacitance, Collector

Depletion Layer

Capacitance, Emitter

Depletion Layer

Feedback Capacitance

Feedback Time Constant

SYMBOL

V

CEO(SUS)

V

(BR)EBO

I

CBO

I

CES

h

FE

f

T

C

TC

C

TE

-C

re

r

bb

聮C

b

聮

c

2.0

3-161

0.85

12

25

20

1.0

1.3

1.5

2.0

MIN.

15

5

10

10

150

125

GHz

GHz

pF

pF

pF

ps

TYP.

MAX. UNIT

V

V

nA

碌

A

CONDITIONS.

I

C

=10mA, I

B

=0

I

E

=10

碌

A, I

C

=0

V

CB

=15V, I

E

=0

V

CE

=15V, V

BE

=0

I

C

=2mA, V

CE

=1V*

I

C

=25mA, V

CE

=1V*

I

C

=2mA, V

CE

=5V, f=400MHz

I

C

=25mA, V

CE

=5V, f=400MHz

V

CB

=10V, I

E

=I

e

=0, f=1MHz

VEB=0.5V, I

C

=I

c

=0, f=1MHz

V

CE

=5V, I

C

=2mA, f=1MHz

V

CB

=5V, -I

E

=2mA, f=10.7MHz

next

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