NPN SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ISSUE 2 聳 MARCH 94
ZTX300
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
25
25
5
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
mA
mW
擄C
500
300
-55 to +175
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
MIN.
25
25
5
0.2
0.2
0.35
0.65
50
150
6
7
1.0
300
MHz
pF
dB
TYP.
MAX.
UNIT
V
V
V
碌
A
碌
A
CONDITIONS.
I
C
=10
碌
A, I
E
=0
I
C
=5mA, I
B
=0
I
E
=10
碌
A, I
C
=0
V
CB
=25V, I
E
=0
V
EB
=4V, I
C
=0
I
C
=50mA, I
B
=5mA*
I
C
=10mA, I
B
=1mA*
I
C
=10mA, V
CE
=6V*
I
C
=10mA, V
CE
=6V
f=100MHz
V
CB
=6V, I
E
=0
f=1MHz
V
CE
=6V, f=1KHz
R
S
=1500
鈩?/div>
, I
C
=100
碌
A
Emitter Cut-Off Current I
EBO
V
CE(sat)
V
BE(sat)
V
V
Static Forward Current h
FE
Transfer Ratio
Transition
Frequency
Output Capacitance
Noise Figure
f
T
C
obo
N
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
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