SCHOTTKY BARRIER DIODE 鈥淪uperBAT鈥?/div>
ISSUE 2 - October 1997
7
1
ZHCS750
C
1
FEATURES:
*
Low V
F
*
High Current Capability
APPLICATIONS:
*
DC - DC converters
*
Mobile telecomms
*
PCMCIA
PARTMARK DETAIL: ZS7
2
A
3
3
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Continuous Reverse Voltage
Forward Current (Continuous)
Forward Voltage @ I
F
= 750mA
Average Peak Forward Current; D.C. = 50%
Non Repetitive Forward Current t鈮?00碌s
t鈮?0ms
Power Dissipation at T
amb
= 25擄 C
Storage Temperature Range
Junction Temperature
SYMBOL
V
R
I
F
V
F
I
FAV
I
FSM
P
tot
T
stg
T
j
VALUE
40
750
490
1500
12
5.2
500
-55 to + 150
125
UNIT
V
mA
mV
mA
A
A
mW
擄C
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄 C unless otherwise stated).
PARAMETER
Reverse Breakdown
Voltage
Forward Voltage
SYMBOL
V
(BR)R
V
F
MIN.
40
TYP.
60
225
235
290
340
390
440
530
50
25
12
280
310
350
420
490
540
650
100
MAX.
UNIT
V
mV
mV
mV
mV
mV
mV
mV
碌A(chǔ)
pF
ns
CONDITIONS.
I
R
= 300碌A(chǔ)
I
F
=
I
F
=
I
F
=
I
F
=
I
F
=
I
F
=
I
F
=
50mA*
100mA*
250mA*
500mA*
750mA*
1000mA*
1500mA*
Reverse Current
Diode Capacitance
Reverse Recovery
Time
I
R
C
D
t
rr
V
R
= 30V
f= 1MHz,V
R
= 25V
switched from
I
F
= 500mA to I
R
= 500mA
Measured at I
R
= 50mA
*Measured under pulsed conditions. Pulse width= 300碌s; duty cycle
鈮?%
.
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2
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