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YB412 Datasheet

  • YB412

  • 4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER HIGH-BANDWIDTH BU...

  • 15頁

  • TI

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TS5N412
4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER
HIGH-BANDWIDTH BUS SWITCH
www.ti.com
SCDS207 鈥?AUGUST 2005
FEATURES
鈥?/div>
Low and Flat ON-State Resistance (r
on
)
Characteristics Over Operating Range
(r
on
= 3
鈩?/div>
Typ)
0- to 10-V Switching on Data I/O Ports
Bidirectional Data Flow With Near-Zero
Propagation Delay
Low Input/Output Capacitance Minimizes
Loading and Signal Distortion
(C
io(OFF)
= 20 pF Max, B Port)
V
CC
Operating Range From 4.75 V to 5.25 V
Latch-Up Performance Exceeds 100 mA Per
JESD 78, Class II
ESD Performance Tested Per JESD 22
鈥?2000-V Human-Body Model
(A114-B, Class II)
鈥?1000-V Charged-Device Model (C101)
Supports Both Digital and Analog
Applications
APPLICATIONS
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
PCI Interface
Differential Signal Interface
Memory Interleaving
Bus Isolation
Low-Distortion Signal Gating
DBQ OR PW PACKAGE
(TOP VIEW)
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
S
1B1
1B2
1A
2B1
2B2
2A
GND
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
CC
OE
4B1
4B2
4A
3B1
3B2
3A
鈥?/div>
DESCRIPTION/ORDERING INFORMATION
The TS5N412 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass
transistor, providing a low and flat ON-state resistance (r
on
). The low and flat ON-state resistance allows for
minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also
features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus.
Specifically designed to support high-bandwidth applications, the TS5N412 provides an optimized interface
solution ideally suited for broadband communications, networking, and data-intensive computing systems.
The TS5N412 is a 4-bit 1-of-2 multiplexer/demultiplexer with a single output-enable (OE) input. The select (S)
inputs control the data path of the multiplexer/demultiplexer. When OE is low, the multiplexer/demultiplexer is
enabled and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is
high, the multiplexer/demultiplexer is disabled and a high-impedance state exists between the A and B ports.
This device is fully specified for partial-power-down applications using I
off
. The I
off
circuitry prevents damaging
current backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE should be tied to V
CC
through a pullup
resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
ORDERING INFORMATION
T
A
鈥?0擄C to 85擄C
(1)
TSSOP 鈥?PW
PACKAGE
(1)
SSOP (QSOP) 鈥?DBQ
Tape and reel
Tape and reel
ORDERABLE PART NUMBER
TS5N412DBQR
TS5N412PWR
TOP-SIDE MARKING
YB412
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are available at
www.ti.com/sc/package.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright 漏 2005, Texas Instruments Incorporated

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  • 英文版
    4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER HIGH-BANDWIDTH BU...
    TI
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    4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER HIGH-BANDWIDTH BU...
    Texas Instruments

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