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NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD57018 is a common source N-Channel, en-
hancement-mode, lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28V in common source mode at frequencies of
up to 1GHz. PD57018 boasts the excellent gain,
linearity and reliability of ST鈥檚 latest LDMOS tech-
nology mounted in the first true SMD plastic RF
power package, PowerSO-10RF. PD57018鈥檚 su-
perior linearity performance makes it an ideal so-
lution for base station applications.
The PowerSO-10 plastic package, designed to of-
fer high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performances and ease of assembly.
PowerSO-10RF
(Formed Lead)
ORDER CODE
BRANDING
PD57018
XPD57018
PowerSO-10RF
(Straight Lead)
ORDER CODE
BRANDING
PD57018S
XPD57018S
ABSOLUTE MAXIMUM RATINGS(T
CASE
= 25
0
C)
Symbol
V
(BR)DSS
V
GS
I
D
P
DISS
T
j
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (@ Tc = 70
0
C)
Max. Operating Junction Temperature
Storage Temperature
Value
65
鹵20
2.5
31.7
165
-65 to 175
Unit
V
V
A
W
0
C
0
C
THERMAL DATA
(T
CASE
= 70
0
C)
R
th(j-c)
Jun 2000
Junction-Case Thermal Resistance
3.0
0
C/W
1/4