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Composite Transistors

XP8081

Silicon N-channel junction FET (Tr1)

Silicon NPN epitaxial planer transistor (Tr2)

Unit: mm

0.425

1.25鹵0.1

0.425

0.2鹵0.05

For analog switching (Tr1)/switching (Tr2)

0.65

2.1鹵0.1

0.65

q

q

Two elements incorporated into one package.

Reduction of the mounting area and assembly cost by one half.

2.0鹵0.1

s

Features

1

2

3

6

5

4

0.9鹵0.1

q

2SK1103+UN1213 (transistors with built-in resistor)

0.7鹵0.1

0 to 0.1

0.2鹵0.1

s

Absolute Maximum Ratings

Parameter

Gate to drain voltage

Tr1

Drain current

Gate current

Collector to base voltage

Tr2

Collector to emitter voltage

Collector current

Total power dissipation

Overall Junction temperature

Storage temperature

Symbol

V

GDS

I

D

I

G

V

CBO

V

CEO

I

C

P

T

T

j

T

stg

(Ta=25藲C)

Ratings

鈥?0

20

10

50

50

100

150

150

鈥?5 to +150

Unit

V

mA

mA

V

V

mA

mW

藲C

藲C

1 : Drain (Tr1)

4 : Emitter (Tr2)

2 : Source (Tr1)

5 : Base (Tr2)

3 : Collector (Tr2) 6 : Gate (Tr1)

EIAJ : SC鈥?8

S鈥揗ini Type Package (6鈥損in)

Marking Symbol:

9Z

Internal Connection

1

2

3

Tr1

6

5

4

Tr2

0.12

鈥?.02

s

Basic Part Number of Element

0.2

+0.05

1

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XP8081相關(guān)型號(hào)PDF文件下載

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  Silicon N-channel junction FET (Tr1) Silicon NPN epitaxial p...
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