Composite Transistors
XN6435
Silicon PNP epitaxial planer transistor
Unit: mm
For high-frequency amplification
0.65鹵0.15
6
0.95
+0.2
2.8
鈥?.3
1.5
鈥?.05
+0.25
0.65鹵0.15
1
0.3
鈥?.05
2.9
鈥?.05
q
q
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
1.9鹵0.1
+0.2
5
2
0.95
4
3
q
2SA1022
脳
2 elements
1.1
鈥?.1
0.4鹵0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Rating Collector to emitter voltage
of
element Emitter to base voltage
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
(Ta=25藲C)
Ratings
鈥?0
鈥?0
鈥?
鈥?0
300
150
鈥?5 to +150
Unit
V
V
V
mA
mW
藲C
1 : Collector (Tr1)
2 : Base (Tr1)
3 : Collector (Tr2)
4 : Base (Tr2)
5 : Emitter (Tr2)
6 : Emitter (Tr1)
EIAJ : SC鈥?4
Mini Type Package (6鈥損in)
Marking Symbol:
7W
Internal Connection
6
Tr1
1
2
3
藲C
5
4
Tr2
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer h
FE
ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
Reverse transfer impedance
Common emitter reverse transfer capacitance
*1
(Ta=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
h
FE
h
FE
(small/large)
*1
V
CE(sat)
V
BE
f
T
NF
Z
rb
C
re
Conditions
V
CB
= 鈥?0V, I
E
= 0
V
CE
= 鈥?0V, I
B
= 0
V
EB
= 鈥?V, IC = 0
V
CE
= 鈥?0V, I
C
= 鈥?mA
V
CE
= 鈥?0V, I
C
= 鈥?mA
I
C
= 鈥?0mA, I
B
= 鈥?mA
V
CE
= 鈥?0V, I
C
= 鈥?mA
V
CB
= 鈥?0V, I
E
= 1mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 1mA, f = 5MHz
V
CB
= 鈥?0V, I
E
= 1mA, f = 2MHz
V
CB
= 鈥?0V, I
E
= 1mA, f = 10.7MHz
150
2.8
22
1.2
50
0.5
0.99
鈥?0.1
鈥?0.7
V
V
MHz
dB
鈩?/div>
pF
min
typ
max
鈥?.1
鈥?00
鈥?0
220
Unit
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
Ratio between 2 elements
0 to 0.05
0.1 to 0.3
0.8
0.16
鈥?.06
+0.2
s
Basic Part Number of Element
+0.1
1.45鹵0.1
s
Features
0.5
鈥?.05
+0.1
+0.1
1
1
2
