Composite Transistors
XN0A554
(XN6A554)
Silicon NPN epitaxial planer transistor
For high speed switching
4
2.90
+0.20
鈥?.05
1.9
鹵0.1
(0.95) (0.95)
5
6
1.50
+0.25
鈥?.05
2.8
+0.2
鈥?.3
Unit: mm
0.16
+0.10
鈥?.06
q
q
3
2
1
(0.65)
0.30
+0.10
鈥?.05
0.50
+0.10
鈥?.05
10擄
1.1
+0.2
鈥?.1
q
s
Absolute Maximum Ratings
(Ta=25藲C)
Parameter
Collector to base voltage
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
Ratings
40
40
5
100
300
300
150
鈥?5 to +150
Unit
V
V
V
mA
mA
mW
藲C
藲C
1 : Collector (Tr1)
2 : Base (Tr2)
3 : Collector (Tr2)
4 : Emitter (Tr2)
5 : Emitter (Tr1)
6 : Base (Tr1)
EIAJ : SC鈥?4
Mini6-G1 Package
Rating Collector to emitter voltage
of
Emitter to base voltage
element
Collector current
Peak collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Marking Symbol:
DT
Internal Connection
6
5
4
Tr1
1
2
3
Tr2
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Forward current transfer h
FE
ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-off time
Turn-on time
Storage time
*1
*2
(Ta=25藲C)
Symbol
I
CBO
I
EBO
h
FE
h
FE
(small/large)
*1
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
off
t
stg
*2
Conditions
V
CB
= 40V, I
E
= 0
V
EB
= 4V, I
C
= 0
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 10mA
I
C
= 10mA, I
B
= 1mA
I
C
= 10mA, I
B
= 1mA
V
CE
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
typ
0 to 0.1
2SC3757
脳
2 elements
1.1
+0.3
鈥?.1
s
Basic Part Number of Element
5擄
q
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
Low V
CE(sat)
.
max
0.1
0.1
Unit
碌A(chǔ)
碌A(chǔ)
60
0.5
0.99
0.17
320
0.25
1.0
450
2
17
17
10
6
MHz
pF
Ratio between 2 elements
Test Circuits
Note) The Part number in the Parenthesis shows conventional part number.
0.4
鹵0.2
s
Features
V
V
ns
1
1
2
3
