鈥?/div>
175
擄
C Full Functionality
DESCRIPTION
The X28HT512 is an 64K x 8 CMOS E
2
PROM, fabri-
cated with Xicor鈥檚 proprietary, high performance, float-
ing gate CMOS technology which provides Xicor prod-
ucts superior high temperature performance character-
istics. Like all Xicor programmable nonvolatile memo-
ries the X28HT512 is a 5V only device. The X28HT512
features the JEDEC approved pinout for bytewide memo-
ries, compatible with industry standard EPROMS.
The X28HT512 supports a 128-byte page write opera-
tion, effectively providing a 39碌s/byte write cycle and
enabling the entire memory to be written in less than 2.5
seconds.
鈥?/div>
鈥?/div>
Simple Byte and Page Write
鈥擲ingle 5V Supply
鈥擲elf-Timed
鈥擭o Erase Before Write
鈥擭o Complex Programming Algorithms
鈥擭o Overerase Problem
Highly Reliable Direct Write鈩?Cell
鈥擡ndurance: 10,000 Write Cycles
鈥擠ata Retention: 100 Years
鈥擧igher Temperature Functionality is Possible
by Operating in the Byte Mode
PIN CONFIGURATION
FLAT PACK
CERDIP
SOIC (R)
VBB
NC
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
X28HT512
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/04
I/O3
6
A12
5
A15
NC
2
V
3
BB
8
A1
13
A2
12
A4
10
A6
PGA
I/O0
I/O2
I/O3
I/O5
I/O6
15
17
19
21
22
A0
14
A3
11
A5
A7
CE
I/O1
VSS
I/O4
I/O7
16
18
20
23
24
A10
25
OE
26
A9
28
A13
30
A14
31
X28HT512
(BOTTOM VIEW)
9
A11
27
A8
29
7
VCC
NC
36
34
NC
1
WE
35
NC
32
NC
33
NC
4
6614 FHD F23
6614 FHD F02.1
漏 Xicor, Inc. 1991, 1995, 1996 Patents Pending
6614-1.5 8/5/97 T2/C0/D0 EW
1
Characteristics subject to change without notice
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