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WS57LV291C-90 Datasheet

  • WS57LV291C-90

  • HIGH SPEED 3.3 VOLT 2K x 8 CMOS PROM/RPROM

  • 6頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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WS57LV291C
PRELIMINARY
HIGH SPEED 3.3 VOLT 2K x 8 CMOS PROM/RPROM
KEY FEATURES
鈥?/div>
3.3 Volt 鹵 0.3 Volt V
CC
鈥?/div>
Fast Access Time
鈥?t
ACC
= 70 ns
鈥?t
CS
= 20 ns
鈥?/div>
Available in 300 Mil "Skinny" DIP
鈥?/div>
Immune to Latch-up
鈥?Up to 200 mA
鈥?/div>
ESD Protection Exceeds 2000V
鈥?/div>
Low Power Consumption
鈥?/div>
鈮?/div>
25 mA I
CC
GENERAL DESCRIPTION
The WS57LV291C is a High Performance 2K x 8 UV Erasable Re-Programmable Read Only Memory (RPROM).
This RPROM is manufactured using an advanced CMOS EPROM manufacturing process resulting in a very low
power die that affords exceptional speed capabilities with a 3.3 volt V
CC
supply. The WS57LV291C
is configured in the standard Bipolar PROM pinouts, the preferred and most common pinout for high speed PROMs
of 16K density.
Operating at 3.3 volts, the WS57LV291C dissipates a maximum of 25 mA under worst case conditions at maximum
speed (70 ns T
AA
). Typical I
CC
at 25擄C is less than 20 milliamps.
The WS57LV291C is packaged in a space saving 300 mil windowed, hermetic DIP package.
BLOCK DIAGRAM
PIN CONFIGURATION
TOP VIEW
CERDIP
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
O
0
O
1
O
2
GND
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
V
CC
A
8
A
9
A10
CS1/V
PP
CS2
CS3
O
7
O
6
O
5
O
4
O
3
6
A5 - A10
ROW
ADDRESSES
ROW
DECODER
EPROM ARRAY
16,384 BITS
5
A0 - A4
COLUMN
ADDRESSES
COLUMN
DECODER
SENSE
AMPLIFIERS
CS1/ V
PP
CS2
CS3
8
OUTPUTS
PRODUCT SELECTION GUIDE
PARAMETER
Address Access Time (Max)
CS to Output Valid Time (Max)
WS57LV291C-70
70 ns
20 ns
WS57LV291C-90
90 ns
30 ns
Return to Main Menu
2-15

WS57LV291C-90相關(guān)型號PDF文件下載

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